Sputter‐grown GeTe/Sb <sub>2</sub> Te <sub>3</sub> superlattice interfacial phase change memory for low power and multi‐level‐cell operation

نویسندگان

چکیده

The multi-level feature of GeTe/Sb2Te3 interfacial phase change memory was achieved by applying a designed voltage-based pulse. It stably demonstrated five states without interference for 90 cycles varying the pulse width. retention time > 1.0 × 103 s, presenting significantly low drift coefficient (ν) < 0.009, indicating no resistivity due to structure relaxation glass. In addition, reset energy consumption reduced more than 85% compared conventional Ge2Sb2Te5 at each bottom electrode contact size. Multi-level-cell operation mechanism and gradual increase in conductance value explained partial resistance transition model where occurred partially all layers. result performance is expected bring great advantages next-generation storage class industry that requires high density.

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ژورنال

عنوان ژورنال: Electronics Letters

سال: 2021

ISSN: ['0013-5194', '1350-911X']

DOI: https://doi.org/10.1049/ell2.12337